It is supplied as a source of high magnetic field for mono-crystalline silicon growth systems by Magnetic field applied Czochralski (MCZ) method.
characteristics of MCZ
| center magnetic field(T) |
bore diameter at room temperature(mm) |
initial cooling down time(hr) |
magnetizing time(min) |
dimension |
Weight(kg) |
| vvertical |
horizotal |
outer diameter(mm) |
hight(mm) |
| 0.2 |
1,600 |
- |
140 |
25 |
2,300 |
946 |
6,200 |
|