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Local lifetime control technology for high power semiconductors has been an effective energy conservation solution in recent years. S.H.I. Examination & Inspection, Ltd. (SHIEI) has achieved such technology by irradiating high-energy proton, helium-3, andhelium-4 ions through cyclotron and Van de Graaff accelerators. SHIEI has succeeded in providing information on optimum ion irradiation conditions to customers by introducing a commercial assessor that evaluates the recovery time (Trr). forward voltage (V1), and leakage current (Irr), all of which will be changed as a result of ion irradiation. In addition, SHIEI has developed new devices called Deep Level Transient Spectroscopy system (based on DLTS method) and capacitance-voltage (C-V) profiling unit, both of which apply the reverse bias of up to 550 V to measure the trap energy level and impurities in the silicon formed after the ion irradiation under similar conditions to those for the mounted high power semiconductors.
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